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EC2023 SOLID STATE ELECTRONIC DEVICES SYLLABUS | ANNA UNIVERSITY BE ECE 6TH SEM SYLLABUS REGULATION 2008 2011 2012-2013

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EC2023 SOLID STATE ELECTRONIC DEVICES SYLLABUS | ANNA UNIVERSITY BE ECE 6TH SEM SYLLABUS REGULATION 2008 2011 2012-2013 BELOW IS THE ANNA UNIVERSITY SIXTH SEMESTER BE  ELECTRONICS AND COMMUNICATION  ENGINEERING DEPARTMENT SYLLABUS, TEXTBOOKS, REFERENCE BOOKS,EXAM PORTIONS,QUESTION BANK,CLASS NOTES, IMPORTANT 2 MARKS, 8 MARKS, 16 MARKS TOPICS. IT IS APPLICABLE FOR ALL STUDENTS ADMITTED IN THE YEAR 2011 2012-2013 (ANNA UNIVERSITY CHENNAI,TRICHY,MADURAI,TIRUNELVELI,COIMBATORE), 2008 REGULATION OF ANNA UNIVERSITY CHENNAI AND STUDENTS ADMITTED IN ANNA UNIVERSITY CHENNAI DURING 2009

EC2023 SOLID STATE ELECTRONIC DEVICES L T P C
3 0 0 3
AIM
79
To have fundamental knowledge about structure and V-I characteristics of PN Junction
diode, Zener diode, MOSFET, BJT, Opto electronic devices, high frequency devices and
high power devices.
OBJECTIVES
 To learn crystal structures of elements used for fabrication of semiconductor
devices.
 To study energy band structure of semiconductor devices.
 To understand fermi levels, movement of charge carriers, Diffusion current and Drift
current.
 To study behavior of semiconductor junction under different biasing conditions.
Fabrication of different semiconductor devices, Varactor diode, Zener diode,
Schottky diode, BJT, MOSFET, etc.
 To study VI Characteristics of devices and ir limitations in factors like current, power
frequency.
 To learn photoelectric effect and fabrication of opto electronic devices.
 To learn high frequency and high power devices.
UNIT I CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS 9
Semiconductor materials - Periodic Structures - Crystal Lattices - Cubic lattices - Planes
and Directions - Diamond lattice - Bulk Crystal Growth - Starting Materials - Growth of
Single Crystal lngots - Wafers - Doping - Epitaxial Growth - Lattice Matching in Epitaxial
Growth - Vapor - Phase Epitaxy - Atoms and Electrons - Introduction to Physical Models
- Experimental Observations - Photoelectric Effect - Atomic spectra - Bohr model -
Quantum Mechanics - Probability and Uncertainty Principle - Schrodinger Wave
Equation - Potential Well Equation - Potential well Problem - Tunneling.
UNIT II ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS
AND JUNCTIONS 9
Energy bands in Solids, Energy Bands in Metals, Semiconductors, and Insulators -
Direct and Indirect Semiconductors - Variation of Energy Bands with Alloy Composition -
Charge Carriers in Semiconductors - Electrons and Holes - Electrons and Holes in
Quantum Wells - Carrier Concentrations - Fermi Level - Electron and Hole
Concentrations at Equilibrium - Temperature Dependence of Carrier Concentrations -
Compensation and Space Charge Neutrality - Drift of Carrier in Electric and Magnetic
Fields conductivity and Mobility - Drift and Resistance - Effects of Temperature and
Doping on Mobility - High field effects - Hall Effect - invariance of Fermi level at
equilibrium - Fabrication of p-n junctions, Metal semiconductor junctions.
UNIT III METAL OXIDE SEMICONDUCTOR FET 9
GaAS MESFET - High Electron Mobility Transistor - Short channel Effects - Metal
Insulator Semiconductor FET - Basic Operation and Fabrication - Effects of Real
Surfaces - Threshold Voltage - MOS capacitance Measurements - current - Voltage
Characteristics of MOS Gate Oxides - MOS Field Effect Transistor - Output
characteristics - Transfer characteristics - Short channel MOSFET V-I characteristics -
Control of Threshold Voltage - Substrate Bias Effects - Sub threshold characteristics -
Equivalent Circuit for MOSFET - MOSFET Scaling and Hot Electron Effects - Drain -
Induced Barrier Lowering - short channel and Narrow Width Effect - Gate Induced Drain
Leakage.
UNIT IV OPTOELCTRONIC DEVICES 9
Photodiodes - Current and Voltage in illuminated Junction - Solar Cells - Photo detectors
- Noise and Bandwidth of Photo detectors - Light Emitting Diodes - Light Emitting
Materials - Fiber Optic Communications Multilayer Heterojunctions for LEDs - Lasers -
80
Semiconductor lasers - Population Inversion at a Junction Emission Spectra for p-n
junction - Basic Semiconductor lasers - Materials for Semiconductor lasers.
UNIT V HIGH FREQUENCY AND HIGH POWER DEVICES 9
Tunnel Diodes, IMPATT Diode, operation of TRAPATT and BARITT Diodes, Gunn
Diode - transferred - electron mechanism, formation and drift of space charge domains,
p-n-p-n Diode, Semiconductor Controlled Rectifier, Insulated Gate Bipolar Transistor.
TOTAL : 45 PERIODS
TEXT BOOK
1. Ben. G. Streetman & Sanjan Banerjee, Solid State Electronic Devices, 5th Edition,
PHI, 2003.
REFERENCES
1. Donald A. Neaman, Semiconductor Physics and Devices, 3rd Edition, TMH, 2002.
2. Yannis Tsividis, Operation & Mode line of MOS Transistor, 2nd Edition, Oxford
University Press, 1999.
3. Nandita Das Gupta & Aamitava Das Gupta, Semiconductor Devices Modeling a
Technology, PHI, 2004.
3. D.K. Bhattacharya & Rajinish Sharma, Solid State Electronic Devices, Oxford
University Press, 2007.

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