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Tuesday, October 16, 2012

PE 9252 ADVANCED POWER SEMICONDUCTOR DEVICES SYLLABUS | ANNA UNIVERSITY ME POWER ELECTRONICS AND DRIVES 1ST SEM SYLLABUS REGULATION 2009 2011 2012-2013

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PE 9252 ADVANCED POWER SEMICONDUCTOR DEVICES SYLLABUS | ANNA UNIVERSITY ME POWER ELECTRONICS AND DRIVES 1ST SEM SYLLABUS REGULATION 2009 2011 2012-2013 BELOW IS THE ANNA UNIVERSITY FIRST SEMESTER M.E POWER ELECTRONICS AND DRIVES DEPARTMENT SYLLABUS, TEXTBOOKS, REFERENCE BOOKS,EXAM PORTIONS,QUESTION BANK,PREVIOUS YEAR QUESTION PAPERS,MODEL QUESTION PAPERS, CLASS NOTES, IMPORTANT 2 MARKS, 8 MARKS, 16 MARKS TOPICS. IT IS APPLICABLE FOR ALL STUDENTS ADMITTED IN THE YEAR 2011 2012-2013 (ANNA UNIVERSITY CHENNAI,TRICHY,MADURAI,TIRUNELVELI,COIMBATORE), 2009 REGULATION OF ANNA UNIVERSITY CHENNAI AND STUDENTS ADMITTED IN ANNA UNIVERSITY CHENNAI DURING 2009

PE 9252 ADVANCED POWER SEMICONDUCTOR DEVICES L T P C
3 0 0 3
UNIT I INTRODUCTION 9
Power switching devices overview – Attributes of an ideal switch, application
requirements, circuit symbols; Power handling capability – (SOA); Device selection
strategy – On-state and switching losses – EMI due to switching - Power diodes -
Types, forward and reverse characteristics, switching characteristics – rating.
UNIT II CURRENT CONTROLLED DEVICES 9
BJT’s – Construction, static characteristics, switching characteristics; Negative
temperature co-efficient and secondary breakdown; Power darlington - Thyristors –
Physical and electrical principle underlying operating mode, Two transistor analogy –
concept of latching; Gate and switching characteristics; converter grade and inverter
grade and other types; series and parallel operation; comparison of BJT and Thyristor –
steady state and dynamic models of BJT & Thyristor.
UNIT III VOLTAGE CONTROLLED DEVICES 9
Power MOSFETs and IGBTs – Principle of voltage controlled devices, construction,
types, static and switching characteristics, steady state and dynamic models of MOSFET
and IGBTs - Basics of GTO, MCT, FCT, RCT and IGCT.
UNIT IV FIRING AND PROTECTING CIRCUITS 9
Necessity of isolation, pulse transformer, optocoupler – Gate drives circuit: SCR,
MOSFET, IGBTs and base driving for power BJT. - Over voltage, over current and gate
protections; Design of snubbers.
UNIT V THERMAL PROTECTION 9
Heat transfer – conduction, convection and radiation; Cooling – liquid cooling, vapour –
phase cooling; Guidance for hear sink selection – Thermal resistance and impedance -
Electrical analogy of thermal components, heat sink types and design – Mounting types.
TOTAL : 45 PERIODS
9
TsEXT BOOKS
1. B.W Williams ‘Power Electronics Circuit Devices and Applications’.
2. Rashid M.H., " Power Electronics Circuits, Devices and Applications ", Prentice Hall
India, Third Edition, New Delhi, 2004.
REFERENCES
1. MD Singh and K.B Khanchandani, “Power Electronics”, Tata McGraw Hill, 2001.
2. Mohan, Undcland and Robins, “Power Electronics – Concepts, applications and
Design, John Wiley and Sons, Singapore, 2000.

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